IRFF320 Datasheet (GE) - FIELD EFFECT POWER TRANSISTOR

IRFF320, FIELD EFFECT POWER TRANSISTOR

~~D~~~ IRFF320,321 FIELD EFFECT POVVER TRANSISTOR 2.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.8 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating

IRFF320 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement