Datasheet4U Logo Datasheet4U.com

IRFF320 - FIELD EFFECT POWER TRANSISTOR

IRFF320 Description

~~D~~~ IRFF320,321 FIELD EFFECT POVVER TRANSISTOR 2.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.8 n Preliminary This series of N-Channel Enhancement-mode.

IRFF320 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

📥 Download Datasheet

Preview of IRFF320 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRFF320
Manufacturer
GE
File Size
186.21 KB
Datasheet
IRFF320-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

📁 Related Datasheet

  • IRFF310 - N-Channel Power MOSFET (Intersil Corporation)
  • IRFF330 - N-Channel Power MOSFET (Intersil Corporation)
  • IRFF024 - N-CHANNEL (International Rectifier)
  • IRFF034 - Bipolar NPN Device (Seme LAB)
  • IRFF110 - N-Channel Power MOSFET (Intersil Corporation)
  • IRFF111 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)
  • IRFF112 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)
  • IRFF113 - (IRFF110 - IRFF113) Power MOS Field-Effect Transistors (GE Solid State)

📌 All Tags

GE IRFF320-like datasheet