IRFF322 Datasheet (GE) - FIELD EFFECT POWER TRANSISTOR

IRFF322, FIELD EFFECT POWER TRANSISTOR

~D~~ IRFF322,323 FIELD EFFECT PONER TRANSISTOR 2.0 AMPERES 400, 350 VOLTS .

ROS(ON) = 2.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating

IRFF322 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement