IRFD321 Datasheet - GE

IRFD321 FIELD EFFECT POWER TRANSISTOR

~o~~ FIELD EFFECT PO'NER TRANSISTOR IRFD320,321 D82CQ2.Q1 0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area .

IRFD321 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD321 Datasheet (184.46 KB)

IRFD321 Datasheet Preview — Preview of IRFD321 PDF

Datasheet Details

Part number:

IRFD321

Manufacturer:

File Size:

184.46 KB

Description:

Field effect power transistor.

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IRFD321 FIELD EFFECT POWER TRANSISTOR GE

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