IRFD1Z0 - FIELD EFFECT POWER TRANSISTOR

Datasheet Details

Part number	IRFD1Z0
Manufacturer	GE
File Size	197.33 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRFD1Z0-GE.pdf

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-CHANNEl CASE STYLE 4-PIN DIP.

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Published: Feb 10, 2019 |