IRFD1Z0 Datasheet (GE) - FIELD EFFECT POWER TRANSISTOR

IRFD1Z0, FIELD EFFECT POWER TRANSISTOR

~[R3D~ [F~lr FIELD EFFECT POWER TRANSISTOR IRFD1Z0,1Z1 D82AL29K2 0.5 AMPERES 100, 60 VOLTS RDS(ON) = 2.4 !1 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operatin

IRFD1Z0 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement