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IRFD222 - FIELD EFFECT POWER TRANSISTOR

GE

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Datasheet Details

Part number	IRFD222
Manufacturer	GE
File Size	187.72 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRFD222-GE.pdf

IRFD222 Product details

Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

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Published: Feb 10, 2019 |