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IRF643 - FIELD EFFECT POWER TRANSISTOR

Download the IRF643 datasheet PDF (IRF642 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for field effect power transistor.

Features

  • Polysilicon gate - Improved stability and reliability.
  • No secondary breakdown - Excellent ruggedness.
  • Ultra-fast switching - Independent of temperature.
  • Voltage controlled - High transconductance.
  • Low input capacitance - Reduced drive requirement.
  • Excellent thermal stability - Ease of paralleling N-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF642-GE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRF643
Manufacturer GE
File Size 202.11 KB
Description FIELD EFFECT POWER TRANSISTOR
Datasheet download datasheet IRF643 Datasheet

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Other Datasheets by GE
  • IRF642 - FIELD EFFECT POWER TRANSISTOR
  • IRF612 - FIELD EFFECT POWER TRANSISTOR
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  • IRF633 - FIELD EFFECT POWER TRANSISTOR
  • IRF712 - FIELD EFFECT POWER TRANSISTOR
  • IRF713 - FIELD EFFECT POWER TRANSISTOR
  • IRF742 - FIELD EFFECT POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
~[R1D~LP~ FIELD EFFECT POWER TRANSISTOR IRF642,643 16 AMPERES 200,150 VOLTS ROS(ON) = 0.22 D. This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
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