20N60S1 N-Channel enhancement mode power MOSFET

Fuji Electric

Description

FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1.
Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Av.

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Datasheet Specifications

Part number: 20N60S1
Manufacturer: Fuji Electric
File Size: 417.90 KB
Datasheet: 20N60S1-FujiElectric.pdf
Description: N-Channel enhancement mode power MOSFET

Applications

* UPS Server Telecom Power conditioner system Power supply 3.6 ±0.2 13.5 min. 1.2 ± 0.2 1 2.54 ± 0.2 23 0.8 +0.2 -0.1 2.54± 0.2 PRE-SOLDER 0.4 +0.2 0 2.7±0.2 1 23 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-220AB DIMENSIONS ARE IN MILLIMETERS. Maximum Ratings and Characteristics Abso

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20N60S1 N-Channel enhancement mode power MOSFET Fuji Electric

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