11N60E - FMV11N60E

Fuji Electric

The 11N60E by Fuji Electric is a FMV11N60E. Below is the official datasheet preview.

📥 Download Datasheet

11N60E FMV11N60E by Fuji Electric - Datasheet Preview — Official preview page of the **11N60E** FMV11N60E datasheet (Fuji Electric).

Datasheet Details

Part number	11N60E
Manufacturer	Fuji Electric
File Size	386.41 KB
Description	FMV11N60E
Datasheet	11N60E-FujiElectric.pdf
Additional preview pages of the 11N60E datasheet.

11N60E Product details

Description

Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range ID IDP VGS IAR EAS EAR dV/dt -di/d

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-220F(SLS).

📁 11N60E Similar Datasheet

11N60 - N-Channel MOSFET (Fairchild Semiconductor)
11N60C2 - Power Transistor (Infineon)
11N60C3 - Power Transistor (Infineon Technologies)
11N60K-MT - N-CHANNEL POWER MOSFET (Unisonic Technologies)
11N60M6 - N-channel Power MOSFET (STMicroelectronics)
11N60S5 - SPP11N60S5 (Infineon Technologies AG)
11N65BS - N-Channel MOSFET (PINGWEI)
11N65C3 - SPP11N65C3 (Infineon Technologies)

Other Datasheets by Fuji Electric

Published: Mar 12, 2018 |