MRF6VP2600HR6 Datasheet (Freescale Semiconductor)

MRF6VP2600HR6, RF Power FET

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz.

Device is unmatched and is suitable for use in broadcast applications.

Typical DVB T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.

Power Gain

MRF6VP2600HR6 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* CW Operation Capability with Adequate Cooling

* Qualified Up to a Maximum of 50 VDD Operation

* Integrated ESD Protection

* Designed for Push

* Pull Operation

* Gr