MRF6P9220HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRF6P9220HR3, RF Power Field Effect Transistor

Ferrite Beads, Short 1.0 μF, 50 V Tantalum Chip Capacitors 0.1 μF Chip Capacitors 1000 pF 100B Chip Capacitors 100 pF 100B Chip Capacitors 8.2 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitor 1.8 pF 600B Chip Capacitor 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitors 22 pF

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev.

2, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.

Typical Single - Carrier N - CDMA Performan

MRF6P9220HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Device Designed for Push - Pull Operation Only

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal