MRF6P27160HR6 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRF6P27160HR6, RF Power Field Effect Transistor

Beads, Surface Mount 5.6 pF Chip Capacitors 3.3 pF Chip Capacitors 0.01 µF Chip Capacitors (1825) 2.2 µF, 50 V Chip Capacitors (1825) 22 µF, 25 V Tantalum Chip Capacitors 47 µF, 16 V Tantalum Chip Capacitors 4.3 pF Chip Capacitors 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitor

Freescale Semiconductor Technical Data MRF6P27160H Rev.

0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.

Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 900

MRF6P27160HR6 Features

* 16 15 Gps, POWER GAIN (dB) 14 13 12 20 V 11 VDD = 16 V 0 400 10 0 60 120 180 240 300 Pout, OUTPUT POWER (WATTS) CW 28 V 24 V IDQ = 1800 mA f = 2645 MHz 10 30 32 V 5 VDD = 28 Vdc IDQ = 1800 mA f = 2645 MHz 1 10 100 20 0 ηD

* 5 0.1 10 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain