3DG2482 - SILICON NPN TRANSISTOR

Datasheet Details

Part number	3DG2482
Manufacturer	Foshan Eming Electronics
File Size	239.76 KB
Description	SILICON NPN TRANSISTOR
Datasheet	3DG2482-FoshanEmingElectronics.pdf

High voltage, small collector output capacitance. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 300 V VCEO 300 V VEBO 7.0 V IC 100 mA IB 50 mA PC 900 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob VCB=240V VEB=7.0V VCE=10V VCE=10V IC=10mA IC=10mA VCE=10V VCB=20V IE=0 IE=0 IC=0 IC=20mA IC=4.0mA IB=1.0mA IB=1.0mA IC=20mA f=1.0MHz Min 30 20 50 Rating Typ 3.0 Max 1.0 1.

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Published: Mar 24, 2015 |