LPS200 HIGH PERFORMANCE LOW NOISE PHEMT

Filtronic Compound Semiconductors

LPS200 Description

HIGH PERFORMANCE LOW NOISE PHEMT * .
AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

LPS200 Features

* 1.0 dB Noise Figure at 18 GHz
* 10 dB Associated Gain at 18 GHz
* Low DC Power Consumption LPS200 GATE BOND PAD (2X) SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.3X2.6 mils (85x65 µm)

LPS200 Applications

* The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gat

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LPS200 Datasheet Preview — Preview of LPS200 PDF

Datasheet Details

Part number: LPS200
Manufacturer: Filtronic Compound Semiconductors
File Size: 29.79 KB
Datasheet: LPS200_FiltronicCompoundSemiconductors.pdf
Description: HIGH PERFORMANCE LOW NOISE PHEMT

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HIGH PERFORMANCE LOW NOISE PHEMT Filtronic Compound Semiconductors

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