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LPS200P70 PACKAGED LOW NOISE PHEMT

LPS200P70 Description

PACKAGED LOW NOISE PHEMT * .
AND APPLICATIONS The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility.

LPS200P70 Features

* 0.7 dB Noise Figure at 12 GHz
* 12 dB Associated Gain at 12 GHz
* 0.6 dB Noise Figure at 2 GHz
* 14 dB Associated Gain at 2 GHz
* Low DC Power Consumption LPS200P70

LPS200P70 Applications

* The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasi

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PACKAGED LOW NOISE PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors LPS200P70-like datasheet