LPS200P70 PACKAGED LOW NOISE PHEMT

Filtronic Compound Semiconductors

Description

PACKAGED LOW NOISE PHEMT * .
AND APPLICATIONS The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility.

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LPS200P70 Datasheet Preview — Preview of LPS200P70 PDF

Datasheet Specifications

Part number: LPS200P70
Manufacturer: Filtronic Compound Semiconductors
File Size: 59.57 KB
Datasheet: LPS200P70_FiltronicCompoundSemiconductors.pdf
Description: PACKAGED LOW NOISE PHEMT

Features

* 0.7 dB Noise Figure at 12 GHz
* 12 dB Associated Gain at 12 GHz
* 0.6 dB Noise Figure at 2 GHz
* 14 dB Associated Gain at 2 GHz
* Low DC Power Consumption LPS200P70

Applications

* The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasi

LPS200P70 Distributors

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LPS200P70 PACKAGED LOW NOISE PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LPS200P70-like datasheet

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