LPD200MX HIGH PERFORMANCE PHEMT

Filtronic Compound Semiconductors

Description

PRELIMINARY DATA SHEET PACKAGED HIGH DYNAMIC RANGE PHEMT * .
AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

📥 Download Datasheet

LPD200MX Datasheet Preview — Preview of LPD200MX PDF

Datasheet Specifications

Part number: LPD200MX
Manufacturer: Filtronic Compound Semiconductors
File Size: 68.94 KB
Datasheet: LPD200MX_FiltronicCompoundSemiconductors.pdf
Description: HIGH PERFORMANCE PHEMT

Features

* 1.0 dB Noise Figure at 1.8 GHz
* 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz
* 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz
* 31 dBm IP3 at 1.8 GHz
* 60% Power-Added-Efficiency LPD200MX

Applications

* The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-sourc

LPD200MX Distributors

📁 Related Datasheet

LPD25 LPD25-10B LPD25-15B LPD25-20B LPD25-25B LPD25-3B

📌 All Tags

LPD200MX HIGH PERFORMANCE PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LPD200MX-like datasheet

LPD200

LPD200P70

LPD200SOT343