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LPD200MX - HIGH PERFORMANCE PHEMT

LPD200MX Description

PRELIMINARY DATA SHEET PACKAGED HIGH DYNAMIC RANGE PHEMT * .
AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

LPD200MX Features

* 1.0 dB Noise Figure at 1.8 GHz
* 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz
* 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz
* 31 dBm IP3 at 1.8 GHz
* 60% Power-Added-Efficiency LPD200MX

LPD200MX Applications

* The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-sourc

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HIGH PERFORMANCE PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors LPD200MX-like datasheet