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LPD200 HIGH PERFORMANCE PHEMT

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Description

HIGH PERFORMANCE PHEMT * .
AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

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Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz
* 12 dB Power Gain at 18 GHz
* 1.0 dB Noise Figure at 18 GHz
* 55% Power-Added Efficiency LPD200 GATE BOND PAD (2X) DRAIN BOND PAD (2X) SOURCE BOND PAD (2x) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9

Applications

* The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide ( AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and

LPD200 Distributors

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