LPA6836V - MEDIUM POWER PHEMT WITH SOURCE VIAS

Filtronic Compound Semiconductors

LPA6836V Description

Preliminary Data Sheet * .
AND APPLICATIONS DIE SIZE: 15.

LPA6836V Features

* 25 dBm Output Power at 1-dB Compression at 18 GHz
* 9.5 dB Power Gain at 18 GHz
* 55% Power-Added Efficiency
* Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD

LPA6836V Applications

* DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ

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Datasheet Details

Part number: LPA6836V
Manufacturer: Filtronic Compound Semiconductors
File Size: 70.02 KB
Datasheet: LPA6836V_FiltronicCompoundSemiconductors.pdf
Description: MEDIUM POWER PHEMT WITH SOURCE VIAS

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MEDIUM POWER PHEMT WITH SOURCE VIAS Filtronic Compound Semiconductors

Filtronic Compound Semiconductors LPA6836V-like datasheet

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