NDP508BE - N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Datasheet Details

Part number	NDP508BE
Manufacturer	Fairchild ↗
File Size	73.44 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDP508BE_FairchildSemiconductor.pdf

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

📁 NDP508BE Similar Datasheet

NDP505A - (NDP505 / NDP5060 N-Channel Enhancement Mode Power FET (National Semiconductor)
NDP505B - (NDP505 / NDP5060 N-Channel Enhancement Mode Power FET (National Semiconductor)
NDP506A - (NDP505 / NDP5060 N-Channel Enhancement Mode Power FET (National Semiconductor)
NDP506B - (NDP505 / NDP5060 N-Channel Enhancement Mode Power FET (National Semiconductor)
NDP5102SE - Dual USB Dedicated Charging Port Controller (Deep-Pool)
NDP02N60Z - N-Channel Power MOSFET (ON Semiconductor)
NDP03N60Z - N-Channel Power MOSFET (ON Semiconductor)
NDP04N62Z - N-Channel Power MOSFET (ON Semiconductor)

Other Datasheets by Fairchild

Published: May 12, 2005 |