NDP5060 N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Description

October 1996 NDP5060 / NDB5060 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

📥 Download Datasheet

NDP5060 Datasheet Preview — Preview of NDP5060 PDF

Datasheet Specifications

Part number: NDP5060
Manufacturer: Fairchild
File Size: 356.82 KB
Datasheet: NDP5060_FairchildSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremel

NDP5060 Distributors

📁 Related Datasheet

NDP506A NDP506B NDP505A NDP505B NDP5102SE NDP02N60Z

📌 All Tags

NDP5060 N-Channel Enhancement Mode Field Effect Transistor Fairchild

Fairchild NDP5060-like datasheet