NDH8303N - Dual N-Channel MOSFET

Fairchild

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Datasheet Details

Part number	NDH8303N
Manufacturer	Fairchild ↗
File Size	72.45 KB
Description	Dual N-Channel MOSFET
Datasheet	NDH8303N_FairchildSemiconductor.pdf

NDH8303N Product details

Description

SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

3.8 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD.

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Published: May 12, 2005 |