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IRFS650B - 200V N-Channel MOSFET

Fairchild

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Datasheet Details

Part number	IRFS650B
Manufacturer	Fairchild ↗
File Size	651.18 KB
Description	200V N-Channel MOSFET
Datasheet	IRFS650B_Fairchild.pdf

IRFS650B Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

15.8A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
◀ ▲.
G! GD S TO-220F IRFS Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°.

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Published: Aug 16, 2005 |