IRFS540A - Advanced Power MOSFET

Features

• Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max. ) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ. ) 1 Ο IRFS540A BVDSS = 100 V RDS(on) = 0.052 Ω ID = 17 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Va.