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IRFS510A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max. ) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ. ) 1 Ο IRFS510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 4.5 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Contin.

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Datasheet Details

Part number IRFS510A
Manufacturer IRF
File Size 253.80 KB
Description Advanced Power MOSFET
Datasheet download datasheet IRFS510A Datasheet

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Full PDF Text Transcription

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) 1 Ο IRFS510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 4.5 A TO-220F 2 3 1.Gate 2. Drain 3.
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