FDMC8884 - N-Channel Power Trench MOSFET

Product Overview

Fairchild

Datasheet Details

Part number	FDMC8884
Manufacturer	Fairchild
File Size	341.70 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC8884 Datasheet
Additional preview pages of the FDMC8884 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook Top Pin 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1

Features

Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A.
Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A.
High performance technology for extremely low rDS(on).
Termination is Lead-free and RoHS Compliant General.

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Published: Mar 8, 2014 |