SSS6N70A Datasheet - Fairchild Semiconductor

SSS6N70A, Advanced Power MOSFET

Advanced Power MOSFET w w w .D t a

Features

* h S a t e e 4U . m o c SSS6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 4 A TO-220F Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) 1 2

SSS6N70A_FairchildSemiconductor.pdf