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SSS4N60AS Advanced Power MOSFET

SSS4N60AS Description

Advanced Power MOSFET .

SSS4N60AS Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Cha

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Advanced Power MOSFET Fairchild Semiconductor
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