SSP70N10A Datasheet - Fairchild Semiconductor

SSP70N10A, Advanced Power MOSFET

Advanced Power MOSFET

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ. ) SSP70N10A BVDSS = 100 V RDS(on) = 0.023 Ω ID = 55 A TO-220 1 2 3 1.Gate 2. Drain 3. S

SSP70N10A_FairchildSemiconductor.pdf