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Data Sheet
RFD14N05L, RFD14N05LSM
October 2013
N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ
These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA09870.
RFD14N05LSM Datasheet
