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KSD1417 - High Power Switching Applications

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KSD1417 KSD1417 High Power Switching Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Complement to KSB1022 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 5 7 10 0.
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