Datasheet4U Logo Datasheet4U.com

KSD1408 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Complement to Type KSB1017 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KSD1408 NPN Transistor Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
KSD1691 Silicon NPN Power Transistor
KSD288 Silicon NPN Power Transistor
KSD5000 Silicon NPN Power Transistor
KSD5001 Silicon NPN Power Transistor
KSD5002 Silicon NPN Power Transistor
KSD5003 Silicon NPN Power Transistor
KSD5004 Silicon NPN Power Transistor
KSD5005 Silicon NPN Power Transistor
KSD5006 Silicon NPN Power Transistor
KSD5007 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor KSD1408 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type KSB1017 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.4 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.