IRLW610A Features
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* 150° C Operating Temperature
* Lower Leakage Current: 10µA (Max.) @ VDS = 200V
* Lower RDS(ON
IRLI610A_FairchildSemiconductor.pdf
Datasheet Details
IRLW610A, IRLI610A
Fairchild Semiconductor
263.36 KB
Advanced power mosfet.
This datasheet PDF includes multiple part numbers: IRLW610A, IRLI610A.
Please refer to the document for exact specifications by model.
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IRLW610A Distributor
