IRLW510A - ADVANCED POWER MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRLW510A
Manufacturer	Fairchild ↗ Semiconductor
File Size	268.75 KB
Description	ADVANCED POWER MOSFET
Datasheet	IRLW510A_FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
175° C Operating Temperature.
Lower Leakage Current: 10µA (Max. ) @ VDS = 100V.
Lower RDS(ON): 0.336Ω (Typ. ) IRLW/I510A BVDSS = 100 V RDS(on) = 0.44Ω ID = 5.6 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Char.

📁 IRLW510A Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 16, 2005 |