IRFW710A Features
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max.) @ VDS = 400V
* Low RDS(ON): 2.815Ω (Typ.) Absolute Maximum Rating
IRFI710A-FairchildSemiconductor.pdf
Datasheet Details
IRFW710A, IRFI710A
Fairchild Semiconductor
222.34 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRFW710A, IRFI710A.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
IRFW710B 400V N-Channel MOSFET (Fairchild Semiconductor)
IRFW710S Power MOSFET (Fairchild Semiconductor)
IRFW720A Power MOSFET (Samsung)
IRFW720B 400V N-Channel MOSFET (Fairchild Semiconductor)
IRFW720S Power MOSFET (Fairchild Semiconductor)
IRFW730A Power MOSFET (Samsung)
IRFW730B 400V N-Channel MOSFET (Fairchild Semiconductor)
IRFW730S Power MOSFET (Fairchild Semiconductor)
IRFW710A Distributor
