IRFR220A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFR220A
Manufacturer	Fairchild Semiconductor
File Size	283.93 KB
Description	Advanced Power MOSFET
Datasheet	IRFR220A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ. ) IRFR/U220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ).

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Published: Dec 6, 2006 |