IRFR214 - Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFR214
Manufacturer	Fairchild Semiconductor
File Size	229.57 KB
Description	Power MOSFET
Datasheet	IRFR214-FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
Lower RDS(ON): 1.393Ω (Typ. ) BVDSS = 250 V RDS(on) = 2.0Ω ID = 2.2 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (T.

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Published: Aug 4, 2016 |