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IRFI644A - Power MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	IRFI644A
Manufacturer	Fairchild ↗ Semiconductor
File Size	255.40 KB
Description	Power MOSFET
Datasheet	IRFI644A_FairchildSemiconductor.pdf

IRFI644A Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
Lower RDS(ON): 0.214Ω (Typ. ) IRFW/I644A BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Conti.

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Other Datasheets by Fairchild Semiconductor

IRFI644 - 250V N-Channel MOSFET
IRFI644B - 250V N-Channel MOSFET
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IRFI640A - Power MOSFET
IRFI640B - 200V N-Channel MOSFET
IRFI610B - 200V N-Channel MOSFET

Published: Jan 21, 2007 |