IRFI640A - Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFI640A
Manufacturer	Fairchild Semiconductor
File Size	263.75 KB
Description	Power MOSFET
Datasheet	IRFI640A-FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max. ) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC) Continuous Drain Current (TC=100oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanch.

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Published: Aug 4, 2016 |