IRFBC40 Datasheet (Fairchild Semiconductor)

IRFBC40, N-Channel Power MOSFET

IRFBC40 Data Sheet January 2002 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requ

IRFBC40 Features

* 6.2A, 600V

* rDS(ON) = 1.200Ω

* Single Pulse Avalanche Energy Rated

* Simple Drive Requirements

* Ease of Paralleling

* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART