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IRFBC40R - N-Channel MOSFET Transistor

Description

purpose applications.

Features

  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Rugged Gate Oxide Technology.

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Full PDF Text Transcription

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC40R FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±20 V V ID Drain Current-Continuous 6.2 A IDM Drain Current-Single Pluse 25 A PD Total Dissipation @TC=25℃ 125 W TJ Max.
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