IRF640A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF640A
Manufacturer	Fairchild Semiconductor
File Size	260.95 KB
Description	Advanced Power MOSFET
Datasheet	IRF640A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Lower RDS(ON) : 0.144 Ω(Typ. ) 1 2 3 IRF640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 18 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drain.

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Published: Apr 16, 2005 |