IRF610A - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF610A
Manufacturer	Fairchild Semiconductor
File Size	279.10 KB
Description	Advanced Power MOSFET
Datasheet	IRF610A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ. ) 1 2 3 IRF610A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM www. DataSheet4U. com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) ) Continuous Drain Current (TC=100 oC Drain Current-Pulsed.

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Published: Jul 2, 2007 |