IRF550 - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF550
Manufacturer	Fairchild Semiconductor
File Size	261.73 KB
Description	Advanced Power MOSFET
Datasheet	IRF550_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ. ) Ο IRF550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Value 1.

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Published: Apr 16, 2005 |