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HUFA75637S3S - N-Channel MOSFET

Features

  • DRAIN (FLANGE).
  • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve HUFA75637P3 HUFA75637S3S Symbol D.
  • UIS Rating Curve Ordering Information PART NUMBER.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUFA75637P3, HUFA75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB Features DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve HUFA75637P3 HUFA75637S3S Symbol D • UIS Rating Curve Ordering Information PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 75637P 75637S HUFA75637P3 G S HUFA75637S3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75637S3ST.