HGTD3N60C3S - 6A/ 600V/ UFS Series N-Channel IGBTs

Fairchild Semiconductor

Datasheet Details

Part number	HGTD3N60C3S
Manufacturer	Fairchild Semiconductor
File Size	227.94 KB
Description	6A/ 600V/ UFS Series N-Channel IGBTs
Datasheet	HGTD3N60C3S_FairchildSemiconductor.pdf

The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |