Datasheet4U.com

G23N60UFD - SGF23N60UFD

Fairchild Semiconductor

📥 Download Datasheet

G23N60UFD Datasheet Preview — Preview of G23N60UFD PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	G23N60UFD
Manufacturer	Fairchild ↗ Semiconductor
File Size	613.80 KB
Description	SGF23N60UFD
Datasheet	G23N60UFD-FairchildSemiconductor.pdf

G23N60UFD Product details

Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses.

Features

High Speed Switching.
Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A.
High Input Impedance.
CO-PAK, IGBT with FRD : trr = 42ns (typ. ).

📁 G23N60UFD Similar Datasheet

G23N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G23N06K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G2300 - CMOS Positive Voltage Regulator (GTM)
G2301 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
G2302 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
G2303 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
G2304 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
G2304A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)

Other Datasheets by Fairchild Semiconductor

Published: Aug 30, 2015 |