G2304A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM

Description

Pb Free Plating Product ISSUED DATE :2005/03/21 REVISED DATE : G2304A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 117m 2.5A Descr.
The G2304A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

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Datasheet Specifications

Part number: G2304A
Manufacturer: GTM
File Size: 367.59 KB
Datasheet: G2304A_GTM.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features

* Simple Drive Requirement
* Small Package Outline Package Dimensions TPU.34)QBDLBHF
* Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1 Power Dissipation Linear Derating

G2304A Distributors

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G2304A N-CHANNEL ENHANCEMENT MODE POWER MOSFET GTM

GTM G2304A-like datasheet