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FQU20N06LE - 60V LOGIC N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers.
  • Built-in ESD Protection Diode D D G G S D-PAK FQD Series I-PAK G D S FQU Series S Absolute Maximum Ratings Symbol VDSS ID.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQD20N06LE / FQU20N06LE May 2001 QFET FQD20N06LE / FQU20N06LE 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.
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