FQU20N06L Datasheet (Fairchild Semiconductor)

FQU20N06L, N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQU20N06L Features

* 17.2 A, 60 V, RDS(on) = 42 mΩ (Max.) @ VGS = 10 V, ID = 8.6 A

* Low Gate Charge (Typ. 9.5 nC)

* Low Crss (Typ. 35 pF)

* 100% Avalanche Tested

* Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers D GDS I-PAK G S Absolute Maxim