Datasheet4U Logo Datasheet4U.com

FQPF7N80C - N-Channel MOSFET

Download the FQPF7N80C datasheet PDF (FQP7N80C included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.3 A.
  • Low Gate Charge (Typ. 27 nC).
  • Low Crss (Typ. 10 pF).
  • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP7N80C_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET FQP7N80C / FQPF7N80C N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 6.6 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.3 A • Low Gate Charge (Typ. 27 nC) • Low Crss (Typ.
Published: |