FQPF33N10L - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF33N10L
Manufacturer	Fairchild Semiconductor
File Size	462.97 KB
Description	N-Channel MOSFET
Datasheet	FQPF33N10L_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

18 A, 100 V, RDS(on) = 52 mΩ (Max. ) @ VGS = 10 V, ID = 9 A.
Low Gate Charge (Typ. 30 nC).
Low Crss (Typ. 70 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source.

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Published: Apr 1, 2005 |